P-TYPE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A PMOS transistor of a semiconductor device and a fabricating method thereof are provided to minimize a leakage current happening at edges between a channel region, a gate electrode, and a gate insulating layer. A gate insulating layer having a first transmission preventing barrier(115) is formed on a semiconductor substrate, and then a gate conductive layer is formed on the gate insulating layer. The gate conductive layer and the gate insulating layer are patterned to form a gate electrode and a gate insulating pattern(114a). An offset spacer(118) is formed on both sides of the gate electrode and the gate insulating layer pattern, in which the offset spacer has a second transmission preventing barrier(215).