Plasma generating device

摘要

A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radioals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.