| 摘要 |
PROBLEM TO BE SOLVED: To reduce a change in property due to the undergroup of bonding wire by electrically isolating the periphery of a semiconductor chip per one bonding wire to be wired to the outside in correspondence with its passage. SOLUTION: A plurality of photo diodes 1 are formed in an in-line arrangement on an Si substrate to which a semiconductor chip 4 is mounted, and a trench isolation 6 made of poly Si (p-Si) is provided among the photo diodes 1. The trench isolation 6 has such a structure that a deep groove having a narrow opening is formed on the surface of the Si substrate 1 and it is filled with the p-Si and polycrystalline Si. Further, the periphery 7 of the semiconductor chip 4 forming the outside of the photo diode 1 is provided with the trench isolation 6 made of p-Si in correspondence with every photo diode 1, thereby isolating electrically the periphery 7 per photo diode 1. |
