发明名称 |
Method of overlay in extreme ultra-violet (EUV) lithography |
摘要 |
Some embodiments of the present disclosure relate to a method of overlay control which utilizes a deformable electrostatic chuck. The method comprises exposing a substrate to radiation which is reflected off of a reticle. The reticle is mounted to a deformable electrostatic chuck by a plurality of raised contacts, where each raised contact is configured to independently vary in height from a surface of the deformable electrostatic chuck. After exposure of the substrate to radiation which is reflected off of the reticle, a displacement between a first alignment shape formed on a first layer disposed on a surface of the substrate and a second alignment shape formed by the exposure is measured. The height of one or more of the plurality of raised contact is changed based upon the displacement to alter a surface topology of the reticle, which negates some effects of clamping topology. Other embodiments are also disclosed. |
申请公布号 |
US9405204(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201314029844 |
申请日期 |
2013.09.18 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Huang Chia-Ching;Hsu Chia-Hao;Chen Chia-Chen |
分类号 |
G03B27/58;G03F7/20;H01L21/683 |
主分类号 |
G03B27/58 |
代理机构 |
Eschweiler & Associates, LLC |
代理人 |
Eschweiler & Associates, LLC |
主权项 |
1. An electrostatic chuck, comprising:
a first pattern of electrodes disposed within a dielectric layer which resides over a top surface of a first layer of insulating material; and a second pattern of raised contacts formed on a bottom surface of a second layer of insulating material which is substantially identical to the first pattern of electrodes; wherein a top surface of the second layer of insulating material comprises a third pattern of recessed areas which is substantially identical to the first and second patterns; and wherein a resistive material resides within each recessed area. |
地址 |
Hsin-Chu TW |