发明名称 Method of overlay in extreme ultra-violet (EUV) lithography
摘要 Some embodiments of the present disclosure relate to a method of overlay control which utilizes a deformable electrostatic chuck. The method comprises exposing a substrate to radiation which is reflected off of a reticle. The reticle is mounted to a deformable electrostatic chuck by a plurality of raised contacts, where each raised contact is configured to independently vary in height from a surface of the deformable electrostatic chuck. After exposure of the substrate to radiation which is reflected off of the reticle, a displacement between a first alignment shape formed on a first layer disposed on a surface of the substrate and a second alignment shape formed by the exposure is measured. The height of one or more of the plurality of raised contact is changed based upon the displacement to alter a surface topology of the reticle, which negates some effects of clamping topology. Other embodiments are also disclosed.
申请公布号 US9405204(B2) 申请公布日期 2016.08.02
申请号 US201314029844 申请日期 2013.09.18
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Huang Chia-Ching;Hsu Chia-Hao;Chen Chia-Chen
分类号 G03B27/58;G03F7/20;H01L21/683 主分类号 G03B27/58
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. An electrostatic chuck, comprising: a first pattern of electrodes disposed within a dielectric layer which resides over a top surface of a first layer of insulating material; and a second pattern of raised contacts formed on a bottom surface of a second layer of insulating material which is substantially identical to the first pattern of electrodes; wherein a top surface of the second layer of insulating material comprises a third pattern of recessed areas which is substantially identical to the first and second patterns; and wherein a resistive material resides within each recessed area.
地址 Hsin-Chu TW