| 发明名称 |
MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device |
| 摘要 |
A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.
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| 申请公布号 |
US7262450(B2) |
申请公布日期 |
2007.08.28 |
| 申请号 |
US20050108933 |
申请日期 |
2005.04.19 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI |
| 分类号 |
H01L29/76;H01L41/09;H01L21/28;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L29/49;H01L29/51;H01L29/745;H01L29/78;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L41/187;H01L41/24 |
主分类号 |
H01L29/76 |
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