摘要 |
<p>PURPOSE:To form a field emitter in a fine pointed head shape with excellent reproducibility so as to be used in an in-vacuum ballistic conduction element or a plane display device. CONSTITUTION:A GaAs substrate 1 is shaved, and a projecting part 3 having a rectangular surface is formed. When a GaAs layer is formed on the GaAs substrate 1 having this projecting part 3 by epitaxial growth such as MOCVD, it follows that a trianugular cross sectional pointed head part 5 is formed. Since the pointed head part 5 is formed by the epitaxial growth, an interface is constituted of a crystal plane, so that it becomes sharp. In the case where a layer being a double barrier structure is laminated upon the tip of the pointed head part 5 bythe epitaxial growth, an emitter to produce a resonance tunnel phenomenon can also be manufactured.</p> |