发明名称
摘要 <p>PURPOSE:To form a field emitter in a fine pointed head shape with excellent reproducibility so as to be used in an in-vacuum ballistic conduction element or a plane display device. CONSTITUTION:A GaAs substrate 1 is shaved, and a projecting part 3 having a rectangular surface is formed. When a GaAs layer is formed on the GaAs substrate 1 having this projecting part 3 by epitaxial growth such as MOCVD, it follows that a trianugular cross sectional pointed head part 5 is formed. Since the pointed head part 5 is formed by the epitaxial growth, an interface is constituted of a crystal plane, so that it becomes sharp. In the case where a layer being a double barrier structure is laminated upon the tip of the pointed head part 5 bythe epitaxial growth, an emitter to produce a resonance tunnel phenomenon can also be manufactured.</p>
申请公布号 JP3154183(B2) 申请公布日期 2001.04.09
申请号 JP19910216213 申请日期 1991.08.02
申请人 发明人
分类号 H01J1/304;H01J1/30;H01J9/02;H01J9/04;H01J19/24;H01J21/10;H01J29/04;H01J31/12;H01L21/20;H01L27/12;H01L29/80;(IPC1-7):H01J9/02 主分类号 H01J1/304
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