| 摘要 |
PURPOSE:To enhance durability and humidity resistance by changing the concentration distribution of constituent elements in the layer thickness direction so as to obtain optical band gap matching between a surface layer and a photoconductive layer in their interface, and specifying the maximum concentration of H atoms in the surface layer. CONSTITUTION:The light receptive layer 102 formed on a substrate 101 is made of a-Si(H,X), and composed of a layer structure of the photoconductive layer 103 and the surface layer 104 of an amorphous material consisting of Si, C, and H atoms as the constituent elements, and the concentrations of these atoms are changed so as to obtain the optical band gap matching in the interface between them, and the surface layer 104 has the maximum concentration of the H atoms of 41-70atom%, preferably, 45-60atom%. |
