| 摘要 |
PROBLEM TO BE SOLVED: To prevent a thin part from being formed locally in a gate insulating film in a boundary section between an enhanced oxidized section and a non-enhanced oxidized section because of an influence of enhanced oxidization. SOLUTION: The depth of n<SP>+</SP>-type source areas 6 and 7 are gradually made smaller as they are close to a surface channel layer 4. Thus, the thickness of a gate oxidized film 8 in an enhanced oxidized section gradually becomes small. Therefore, the gate oxidized film 8 can be prevented from drastically changing in thickness on both the surface of the n<SP>+</SP>-type source areas 6 and 7 and the surface of the surface channel layer 4. As a result, a thin part can be prevented from being formed locally in the gate insulating film 8 in a boundary between an enhanced oxidized section and a non-enhanced oxidized section. COPYRIGHT: (C)2009,JPO&INPIT
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