发明名称 |
METHOD OF FABRICATING ZTO THIN FILM, THIN FILM TRANSISTOR EMPLOYING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR |
摘要 |
Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer.
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申请公布号 |
US2010019239(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090359149 |
申请日期 |
2009.01.23 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHEONG WOO SEOK;YOON SUNG MIN;SHIN JAE HEON;HWANG CHI SUN |
分类号 |
H01L29/786;H01L21/20 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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