| 摘要 |
A process for fabricating layered semiconductor structures, particularly thin gallium arsenide solar cells, on reusable substrates. The structure is fabricated by depositing a selectively removable layer such as gallium aluminum arsenide onto a substrate, and then depositing a solar cell basic structure on the selectively removable layer. Preferably, the solar cell basic structure includes a layer of p-type gallium arsenide on the layer of gallium aluminum arsenide, a layer of n-type gallium arsenide on the p-type gallium arsenide, and a transparent glass cover over the n-type gallium arsenide layer. The solar cell basic structure is separated from the substrate by selectively dissolving the gallium aluminum arsenide layer, and a new layer of gallium aluminum arsenide is epitaxially deposited upon the exposed face to form a thin, lightweight gallium arsenide solar cell. If the layer of p-type gallium arsenide is about 0.5 microns thick or less, the new layer of gallium aluminum arsenide may be omitted. The separated substrate can then be reused.
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