发明名称 |
Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats |
摘要 |
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
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申请公布号 |
US7580284(B2) |
申请公布日期 |
2009.08.25 |
申请号 |
US20080034968 |
申请日期 |
2008.02.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JIN-SUNG;BYEON DAE-SEOK |
分类号 |
G11C11/34;G11C7/00;G11C8/18;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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