发明名称 Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
摘要 A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
申请公布号 US7580284(B2) 申请公布日期 2009.08.25
申请号 US20080034968 申请日期 2008.02.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JIN-SUNG;BYEON DAE-SEOK
分类号 G11C11/34;G11C7/00;G11C8/18;G11C16/04 主分类号 G11C11/34
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