| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem that, though light emission becomes most intense in the projection area of a metal film in the conventional GaN-based LED provided with an electrode combined with a light-transmissive electrode film and a metal film, the light is prevented from being picked up by the metal film that is located just above, and light emission efficiency is lowered as a result. <P>SOLUTION: The GaN-based LED is provided with a current diffusion layer made of a metallic material, and an electrode combined with a light-transmissive electrode layer. A material for the current diffusion layer and the light transmission electrode layer is selected to match for the conductive type of the nitride semiconductor layer, so that a contact resistance on the boundary between the current diffusion layer and a nitride semiconductor layer may be larger than that on the boundary between the light-transmissive electrode layer and the nitride semiconductor layer. Therefore, current supplied to the nitride semiconductor layer concentrates on a route crossing the boundary between the light-transmissive electrode layer and the nitride semiconductor layer, so that light emission can be prevented in the projection area of the current diffusion area. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
