发明名称 ACRYLATE-BASED COPOLYMER FOR AFM LITHOGRAPHY AND FORMATION METHOD OF MICRO OXIDATION PATTERN USING THE COPOLYMER
摘要 PURPOSE: An acrylate-based copolymer for the AFM(atomic force microscopy) lithography and a method for forming the micro oxidation pattern using the copolymer are provided, to obtain the micro oxidation pattern of the size of several nanometers. CONSTITUTION: The acrylate-based copolymer is represented by the formula 1, wherein R1, R2 and R3 are H or CH3; R4 is H, CH3 or CH2CH2OH; and l+m+n = 1, 0.1<=l<=0.9, 0.05<=m <=0.8 and 0.05<=n<=0.5. Preferably the acrylate-based copolymer has a mass average molecular weight of 5,000-100,000. The method comprises the steps of forming a super thin film by using the copolymer on the surface of a semiconductor or metal substrate by spin coating; and applying the voltage locally by using AFM to form the micro oxidation pattern. Preferably the metal is Si, GaAs, Ti, Cr or Mn.
申请公布号 KR20030013878(A) 申请公布日期 2003.02.15
申请号 KR20010048107 申请日期 2001.08.09
申请人 HANYANG HAK WON CO., LTD. 发明人 KIM, SEONG SU;LEE, HAE WON;SON, MIN SEOK
分类号 G03F7/027;G03F7/004 主分类号 G03F7/027
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