| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor luminescent element of high luminosity by improving a p-type contact layer. SOLUTION: On an MQW active layer 160 of film thickness of about 230 Å, a cap layer 107 comprising GaN of film thickness of about 140 Å and a p-type clad layer 108 of film thickness of about 200 Å comprising p-type AlxGa1-xN (x=0.12) of Mg dope are formed, with a p-type contact layer 109 of film thickness of about 600 Å comprising p-type AlyGa1-y (y=0.05) is formed further. Composition ratios x, y satisfy an equation 0.03<=0.3x<=y<=0.5x<=0.08, and the composition of the p-type contact layer is closer to that of p-type clad layer than before. Thus, the difference in crystal lattice constants between the two layers is smaller, making the growth of p-type contact layer of satisfactory quality. The difference in thermal expansion factors between the two layers becomes relatively small, and stress remaining in a luminous element becomes small. Thus, the luminosity of a luminous element 100 is improved. |
