HIGH CONDUCTANCE PROCESS KIT

摘要

Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

主权项

1. A process kit for a plasma processing chamber, the apparatus comprising:
an upper shield comprising:
an interior cylindrical liner defining a cylindrical volume, wherein a bottom edge of the cylindrical liner defines a plane; anda circular interior top surface, wherein a center of the circular interior top surface includes a circular aperture, wherein the circular interior top surface includes a first portion extending radially outward from the aperture in which a distance from the interior top surface to the plane increases as the distance from the aperture increases, wherein the circular top surface includes a second portion extending radially outward from the first portion in which the interior top surface smoothly curves toward and mates with an inward-facing surface of the cylindrical liner.