发明名称 Capacitor in semiconductor device and manufacturing method
摘要 The capacitor in a semiconductor device includes a substrate, a lower electrode formed over the substrate, a diffusion barrier formed over the lower electrode, a plurality of agglomerates formed over the diffusion barrier, a dielectric layer formed over the surface of the agglomerates to form an uneven surface, and an upper electrode formed over the dielectric layer.
申请公布号 US7364968(B2) 申请公布日期 2008.04.29
申请号 US20060611679 申请日期 2006.12.15
申请人 DONGBU HITEK CO. LTD. 发明人 LEE JAE SUK
分类号 H01L21/8242 主分类号 H01L21/8242
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