发明名称 MANUFACTURE OF THIN FILM EL ELEMENT AND THIN FILM EL ELEMENT
摘要 PROBLEM TO BE SOLVED: To prevent any peeling of an EL light emitting layer and achieve high luminance by performing annealing by irradiation with an excimer laser beam. SOLUTION: A thin film EL element is fabricated as follows: in process a1, a lower electrode made of transparent conductive or metal material is formed on an insulating glass substrate, in process a2, dehydrating and degassing are performed in a vacuum at 200-500 deg.C for 1.5-5 hours, in process a3, a first insulating layer is formed, in process a4, an EL light emitting layer is formed, in process a5, a second insulating layer is formed, in process a6, annealing is performed by irradiation of an excimer laser beam via a mask for shielding the irradiation of a region between the adjacent lower electrodes and a marginal region of each of the lower electrodes with the beam, in process a7, an upper electrode is formed. The irradiation of the excimer laser beam after the previous discharge of gas by dehydrating and degassing can reduce gas discharge at the time of the irradiation with the excimer laser beam, thus preventing any peeling of an EL light emitting layer.
申请公布号 JP2000357586(A) 申请公布日期 2000.12.26
申请号 JP19990168822 申请日期 1999.06.15
申请人 SHARP CORP 发明人 FUTABOSHI MANABU
分类号 H05B33/10;H05B33/12;H05B33/14;(IPC1-7):H05B33/10 主分类号 H05B33/10
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