| 发明名称 |
COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE |
| 摘要 |
Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: <?in-line-formulae description="In-line Formulae" end="lead"?>(R<SUP>1</SUP>)<SUB>a</SUB>Si(R<SUP>2</SUP>)<SUB>4-a</SUB> (1)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>(R<SUP>3</SUP>)<SUB>b</SUB>Si(R<SUP>4</SUP>)<SUB>4-b</SUB> (2)<?in-line-formulae description="In-line Formulae" end="tail"?> Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
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| 申请公布号 |
US2007087124(A1) |
申请公布日期 |
2007.04.19 |
| 申请号 |
US20060537697 |
申请日期 |
2006.10.02 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. |
发明人 |
IWABUCHI MOTOAKI;YAGIHASHI FUJIO;HAMADA YOSHITAKA;NAKAGAWA HIDEO;SASAGO MASARU |
| 分类号 |
C08J9/26;C08L83/04;B05D3/02;C08G77/04;C08G77/38;C08K5/23;C09D183/04;H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
C08J9/26 |
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