MULTIPLE RANGE RF AMPLIFIER

摘要

An amplifier includes at least two amplification stages coupled in parallel. Each amplification stage includes at differential pair of amplifying MOS transistors having gates connected to a first and second input nodes common to amplifying stages, and bulk regions connected to each other but insulated from bulk regions of the amplifying MOS transistors of the other amplification stages. A configuration circuit generates bias voltage for application to the bulk terminals in each amplification stage to set the threshold voltages of the amplifying MOS transistors, and thus configuring the operating range of each amplification stage so that different amplification stages have different operating ranges.

主权项

1. An RF amplifier, comprising:
at least two amplification stages coupled in parallel, each amplification stage comprising at least a first amplifying MOS transistor having a gate connected to a first input node common to all of said amplification stages, having a first source or drain region connected to a first output node common to all of said amplification stages, and having a bulk region insulated from bulk regions of amplifying MOS transistors in other amplification stages; and a configuration circuit configured to apply to each amplification stage, on a node for biasing the bulk region of said at least one first amplifying MOS transistor of the amplification stage, a voltage for configuring an operating range of the amplification stage, wherein different configuration voltage are applied to different amplification stages.