FINFET DEVICES HAVING ASYMMETRICAL EPITAXIALLY-GROWN SOURCE AND DRAIN REGIONS AND METHODS OF FORMING THE SAME

摘要

Fin field-effect transistor (FinFET) devices and methods of forming the same are provided herein. In an embodiment, a FinFET device includes a semiconductor substrate having a plurality of fins disposed in parallel relationship. A first insulator layer overlies the semiconductor substrate, with the fins extending through and protruding beyond the first insulator layer to provide exposed fin portions. A gate electrode structure overlies the exposed fin portions and is electrically insulated from the fins by a gate insulating layer. Epitaxially-grown source regions and drain regions are disposed adjacent to the gate electrode structure. The epitaxially-grown source regions and drain regions have an asymmetric profile along a lateral direction perpendicular to a length of the fins.

主权项

1. A fin field-effect transistor device comprising:
a semiconductor substrate having a plurality of fins disposed in parallel relationship; a first insulator layer overlying the semiconductor substrate, with the fins extending through and protruding beyond the first insulator layer to provide exposed fin portions; a gate electrode structure overlying the exposed fin portions and electrically insulated from the fins by a gate insulating layer; and epitaxially-grown source regions and drain regions disposed adjacent to the gate electrode structure; wherein the epitaxially-grown source regions and drain regions have an asymmetric profile along a lateral direction perpendicular to a length of the fins.