| 发明名称 | Method for depositing a film on a substrate, and film deposition apparatus | ||
| 摘要 | A method for processing a substrate using a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber and a rotatable turntable having a substrate receiving part provided in the process chamber. In the method, a substrate is placed on a substrate receiving part, and the substrate is processed by supplying process gases into the process chamber. At least a water vapor is supplied into the chamber when the substrate is placed on the substrate receiving part. After that, the substrate is carried out of the process chamber. | ||
| 申请公布号 | US9388496(B2) | 申请公布日期 | 2016.07.12 |
| 申请号 | US201514602403 | 申请日期 | 2015.01.22 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Hane Hideomi;Umehara Takahito |
| 分类号 | H01L21/31;C23C16/458;H01L21/02;C23C16/448;C23C16/44;C23C16/455;H01L21/677;H01L21/687 | 主分类号 | H01L21/31 |
| 代理机构 | IPUSA, PLLC | 代理人 | IPUSA, PLLC |
| 主权项 | 1. A method for processing a substrate using a substrate processing apparatus including a process chamber and a turntable having a substrate receiving part provided in the process chamber, the method comprising steps of: placing a substrate on the substrate receiving part; processing the substrate by supplying a process gas into the process chamber; supplying at least a water vapor into the process chamber, when the substrate is placed on the substrate receiving part, for a period of 2 to 30 seconds; and carrying the substrate on the substrate receiving part out of the process chamber. | ||
| 地址 | Tokyo JP | ||