Methods of fabricating features associated with semiconductor substrates

摘要

Some embodiments include a method of fabricating features associated with a semiconductor substrate. A first region of the semiconductor substrate is altered relative to a second region. The altered first region has different physisorption characteristics for polynucleotide relative to the second region. The altered first region and the second region are exposed to polynucleotide. The polynucleotide selectively adheres to either the altered first region or the second region to form a polynucleotide mask. The polynucleotide mask is used during fabrication of features associated with the semiconductor substrate.

主权项

1. A method of fabricating features associated with a semiconductor substrate, comprising:
altering surface potential characteristics of a first region of the semiconductor substrate relative to a second region; the altered first region having different physisorption characteristics for polynucleotide relative to the second region; exposing the altered first region and the second region to polynucleotide; the polynucleotide selectively adhering to either the altered first region or the second region to form a polynucleotide mask; using the polynucleotide mask during fabrication of features associated with the semiconductor substrate; and wherein the using of the polynucleotide mask during fabrication of the features includes, etching into the semiconductor substrate while using the polynucleotide mask to define a pattern for the etch.