Monolithic three dimensional memory arrays with staggered vertical bit line select transistors and methods therfor

摘要

A monolithic three-dimensional memory array is provided that includes a plurality of global bit lines disposed above a substrate, each global bit line having a long axis, a plurality of vertically-oriented bit lines disposed above the global bit lines, a plurality of word lines disposed above the global bit lines, a plurality of memory cells coupled between the vertically-oriented bit lines and the word lines, and a plurality of vertically-oriented bit line select transistors coupled between the vertically-oriented bit lines and the global bit lines, each vertically-oriented bit line select transistor comprising a width and a thickness. Vertically-oriented bit line select transistors disposed above adjacent global bit lines are offset from one another in a direction along the long axis of the global bit lines. The width of each vertically-oriented bit line select transistor is greater than the thickness of the vertically-oriented bit line select transistors.

主权项

1. A monolithic three-dimensional memory array comprising:
a plurality of global bit lines disposed above a substrate, each global bit line extending in a first direction, the plurality of global bit lines arranged in a second direction perpendicular to the first direction; a plurality of vertically-oriented bit lines disposed above the global bit lines, each of the vertically-oriented bit lines extending in a third direction perpendicular to the first and second directions; a plurality of word lines disposed above the global bit lines; a plurality of memory cells coupled between the vertically-oriented bit lines and the word lines; and a plurality of vertically-oriented bit line select transistors coupled between the vertically-oriented bit lines and the global bit lines, each vertically-oriented bit line select transistor comprising a width in the second direction and a thickness in the first direction, wherein:
vertically-oriented bit line select transistors disposed above adjacent global bit lines are offset from one another in the first direction, andthe width of each vertically-oriented bit line select transistor is greater than the thickness of the vertically-oriented bit line select transistors.