| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a device size and achieving high integration by forming the surface of a substrate to be in a trench structure and providing a base region and a base electrode, and to provide a method of manufacturing the semiconductor device. SOLUTION: An n-type impurity (for example, antimony) is contained in a silicon substrate 10 to form a collector region RC. On the surface of the silicon substrate 10, a plurality of recesses 10a, and the like are formed. At one portion of the surface of the silicon substrate 10 excluding each recess 10a, an emitter region RE is formed so that it is isolated by each recess 10a. A base region RB is formed at the upper side of the collector region RC, on the bottom and side of each recess 10a, and at the lower side of the emitter region RE. Phosphor as an n-type impurity and boron as a p-type impurity are contained in the emitter region RE and the base region RB, respectively. COPYRIGHT: (C)2008,JPO&INPIT
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