发明名称 |
METHOD FOR PRODUCING INTERNAL MEMBER OF DRY ETCHING CHAMBER |
摘要 |
A method for producing an internal member of a dry etching chamber by forming an yttria coating on the member. With H2 gas and Ar gas used as working gases, Ar gas and H2 gas are supplied to a plasma spray apparatus so the flow-volume ratio of Ar gas to H2 gas is 6 to 8 with a flow rate of Ar gas set to 60 to 75 liters/min to increase the flow rate of Ar gas with respect to a flow rate of H2 gas, so that the speed of a plasma jet is increased and the temperature of the plasma jet is decreased, then yttria fine powder having a particle size of 10 to 20 μm is introduced as a powder material to the plasma jet, and the plasma jet containing molten yttria fine powder is sprayed onto the surface of the member. |
申请公布号 |
US2016298223(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201415100906 |
申请日期 |
2014.11.06 |
申请人 |
Kurashiki Boring Kiko Co., Ltd. |
发明人 |
SAKODA Nobuaki;ZENG Zhensu;SAKO Sayaka |
分类号 |
C23C4/134;C23C4/11 |
主分类号 |
C23C4/134 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming an yttria coating on a member to be used within a dry etching chamber by plasma spraying, the method comprising:
supplying Ar gas and H2 gas as working gases to a plasma spray apparatus in such a way that a volume ratio of the Ar gas flow to the H2 gas flow is 6 to 8 with a flow rate of the Ar gas set to 60 to 75 liters/minute to increase the flow rate of the Ar gas with respect to a flow rate of the H2 gas, so that a speed of a plasma jet is increased and a temperature of the plasma jet is decreased; introducing yttria fine powder having a particle size of 10 to 20 μm as a powder material to the plasma jet; and spraying the plasma jet containing molten yttria fine powder onto a surface of the member to form an yttria coating. |
地址 |
Kurashiki-shi, Okayama JP |