发明名称 METHOD FOR PRODUCING INTERNAL MEMBER OF DRY ETCHING CHAMBER
摘要 A method for producing an internal member of a dry etching chamber by forming an yttria coating on the member. With H2 gas and Ar gas used as working gases, Ar gas and H2 gas are supplied to a plasma spray apparatus so the flow-volume ratio of Ar gas to H2 gas is 6 to 8 with a flow rate of Ar gas set to 60 to 75 liters/min to increase the flow rate of Ar gas with respect to a flow rate of H2 gas, so that the speed of a plasma jet is increased and the temperature of the plasma jet is decreased, then yttria fine powder having a particle size of 10 to 20 μm is introduced as a powder material to the plasma jet, and the plasma jet containing molten yttria fine powder is sprayed onto the surface of the member.
申请公布号 US2016298223(A1) 申请公布日期 2016.10.13
申请号 US201415100906 申请日期 2014.11.06
申请人 Kurashiki Boring Kiko Co., Ltd. 发明人 SAKODA Nobuaki;ZENG Zhensu;SAKO Sayaka
分类号 C23C4/134;C23C4/11 主分类号 C23C4/134
代理机构 代理人
主权项 1. A method for forming an yttria coating on a member to be used within a dry etching chamber by plasma spraying, the method comprising: supplying Ar gas and H2 gas as working gases to a plasma spray apparatus in such a way that a volume ratio of the Ar gas flow to the H2 gas flow is 6 to 8 with a flow rate of the Ar gas set to 60 to 75 liters/minute to increase the flow rate of the Ar gas with respect to a flow rate of the H2 gas, so that a speed of a plasma jet is increased and a temperature of the plasma jet is decreased; introducing yttria fine powder having a particle size of 10 to 20 μm as a powder material to the plasma jet; and spraying the plasma jet containing molten yttria fine powder onto a surface of the member to form an yttria coating.
地址 Kurashiki-shi, Okayama JP