发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A semiconductor storage device provided can increase a write margin and suppress increase of a chip area. The semiconductor storage device includes plural memory cells arranged in a matrix; plural bit-line pairs arranged corresponding to each column of the memory cells; a write driver circuit which transmits data to a bit-line pair of a selected column according to write data; and a write assist circuit which drives a bit line on a low potential side of the bit-line pair of a selected column to a negative voltage level. The write assist circuit includes first signal wiring; a first driver circuit which drives the first signal wiring according to a control signal; and second signal wiring which is coupled to the bit line on the low-potential side and generates a negative voltage by the driving of the first driver circuit, based on inter-wire coupling capacitance with the first signal wiring. |
申请公布号 |
US2016240246(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615134981 |
申请日期 |
2016.04.21 |
申请人 |
Renesas Electronics Corporation |
发明人 |
SANO Toshiaki;SHIBATA Ken;TANAKA Shinji;YABUUCHI Makoto;MAEDA Noriaki |
分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |