METHOD AND APPARATUS FOR DETERMINING AN ACTUAL JUNCTION TEMPERATURE OF AN IGBT DEVICE

摘要

The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of;
measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; anddetermining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).

主权项

1. Method for determining an actual junction temperature (Tj) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of:
measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature based on the characteristics of the emitter voltage drop (VEE′), wherein the junction temperature (Tj) is determined by the steps of: assigning a reference peak voltage of the emitter voltage drop (VEE′) during the switching operation to a provided collector emitter voltage (VDC) of the IGBT device and a determined collector current (IC), wherein the reference peak voltage corresponds to a peak voltage of the emitter voltage drop (VEE′) during a switching operation at a reference temperature; determining a peak voltage of the emitter voltage drop (VEE′) during the switching operation; and determining the actual junction temperature (Tj) depending on the determined peak voltage and the reference peak voltage,