发明名称 |
PROGRAMMABLE READ ONLY MEMORY WITH BUILT-IN ERROR CORRECTING FUNCTION |
摘要 |
PROBLEM TO BE SOLVED: To reduce the scale of a PROM circuit with a built-in ECC function and to increase the speed. SOLUTION: Write data are stored in a first PROM, and an error correction code generated from written data is stored in a second PROM. When reading data, based on the read data in the first and second PROM, a detection circuit 1 and a decoder circuit 2 specify the error bit position of read data from the first PROM and generate a correct signal. A '1≈signal is supplied to the AND circuit of a correction circuit 3 selected by the correct signal and bit data from the first PROM are changed to '0'.
|
申请公布号 |
JPH11154118(A) |
申请公布日期 |
1999.06.08 |
申请号 |
JP19970321791 |
申请日期 |
1997.11.21 |
申请人 |
NEC IC MICROCOMPUT SYST LTD |
发明人 |
FUJITA MITSUHIRO;OCHIAI MASAMI |
分类号 |
G06F12/16;G06F11/10;(IPC1-7):G06F12/16 |
主分类号 |
G06F12/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|