发明名称 PROGRAMMABLE READ ONLY MEMORY WITH BUILT-IN ERROR CORRECTING FUNCTION
摘要 PROBLEM TO BE SOLVED: To reduce the scale of a PROM circuit with a built-in ECC function and to increase the speed. SOLUTION: Write data are stored in a first PROM, and an error correction code generated from written data is stored in a second PROM. When reading data, based on the read data in the first and second PROM, a detection circuit 1 and a decoder circuit 2 specify the error bit position of read data from the first PROM and generate a correct signal. A '1≈signal is supplied to the AND circuit of a correction circuit 3 selected by the correct signal and bit data from the first PROM are changed to '0'.
申请公布号 JPH11154118(A) 申请公布日期 1999.06.08
申请号 JP19970321791 申请日期 1997.11.21
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 FUJITA MITSUHIRO;OCHIAI MASAMI
分类号 G06F12/16;G06F11/10;(IPC1-7):G06F12/16 主分类号 G06F12/16
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