| 摘要 |
In a repair method for a memory device, a process for determining whether or not repair is possible is first performed, following which processes are carried out for determining whether or not repair of failed lines is possible and whether or not repair of failed bits is possible. It is then determined whether or not a limit exists for a limbo portion, and if a limit exists, failure address connections of spare column portions are extracted from a buffer memory, and a rule check of the limbo portion and an adjustment of repair addresses is carried out in one-block portions for the obtained repair addresses.
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