Variable resistance memory devices

摘要

A variable resistance memory device includes a plurality of first conductive lines, a plurality of second conductive lines, a plurality of memory cells, a plurality of first air gaps and a plurality of second air gaps. The first conductive line extends in a first direction. The second conductive line is over the first conductive line and extends in a second direction crossing the first direction. The memory cell includes a variable resistance device. The memory cell is located at an intersection region of the first conductive line and the second conductive line. The first air gap extends in the first direction between the memory cells. The second air gap extends in the second direction between the memory cells.

主权项

1. A variable resistance memory device, comprising:
a plurality of first conductive lines extending in a first direction; a plurality of second conductive lines over the first conductive lines, the second conductive line extending in a second direction crossing the first direction; a plurality of memory cells including a variable resistance device, each of the memory cells located at an intersection region of the first conductive line and the second conductive line; a plurality of first air gaps extending in the first direction between the memory cells; a plurality of second air gaps extending in the second direction between the memory cells; and a capping layer pattern at an upper portion of the second air gap.