发明名称 |
Semiconductor photocathode and semiconductor photocathode apparatus using the same |
摘要 |
<p>Formed on a semiconductor substrate (10) is a first semiconductor layer (20; light absorbing layer) of p-type which has a first dopant concentration and generates an electron in response to light incident. Formed on the first semiconductor layer (20) is a second semiconductor layer (30; electron transfer layer) of p-type having a second dopant concentration lower than the first dopant concentration. A contact layer (50) forms a pn junction with the p-type second semiconductor layer (30). A surface electrode (80) is formed on and in ohmic contact with the contact layer (50). A third semiconductor layer (40; activation layer) is formed within an opening of the contact layer (50) on the surface of the second semiconductor layer (30). Embedded in the second semiconductor layer (30) is a semiconductor section (60; channel grid) having a third dopant concentration. Thus, the quantum efficiency is improved, while structural pixel separation becomes unnecessary at an open area ratio of 100%, and signal modulation is enabled. <IMAGE></p> |
申请公布号 |
EP0810621(A1) |
申请公布日期 |
1997.12.03 |
申请号 |
EP19970303615 |
申请日期 |
1997.05.28 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
NIHASHI, TOKUAKI;NIIGAKI, MINORU |
分类号 |
H01J1/34;H01J43/10;H01L31/00;H01L33/02;H01L33/50;(IPC1-7):H01J1/34 |
主分类号 |
H01J1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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