发明名称 RESIST TREATMENT DEVICE, RESIST TREATMENT METHOD, AND RESIST PATTERN
摘要 PURPOSE:To prevent etching pattern defect and smear and enable a highly accurate etching pattern to be formed by providing at least a means for emitting ultraviolet rays onto a substrate where a resist is formed and a means for introducing an inactive gas into the device. CONSTITUTION:A substrate which is developed by exposure is dried by nitrogen gas etc. after rinsing with water and is carried into a UV chamber by a carrier arm. A gate valve 4 is closed before the substrate is placed on a hot plate 2 and an environmental gas is fully replaced by an inactive gas. At the same time when a substrate is grounded onto the hot plate 2, UV light starts to be irradiated. After emitting the UV light with a specified energy, irradiation is stopped. The temperature of the hot plate is increased, UV cure is performed at a boiling point or higher of a solvent medium which is included in a resist, a temperature below a thermal deformation temperature of the improved resists is maintained. The UV light irradiation energy can be reduced by increasing the substrate temperature at the time of irradiation.
申请公布号 JPH0427113(A) 申请公布日期 1992.01.30
申请号 JP19900161554 申请日期 1990.06.20
申请人 OMI TADAHIRO 发明人 OMI TADAHIRO;NONAKA TORU;ONODERA MASANOBU;HORIKOSHI MOTONOBU
分类号 G03F7/26;G03F7/38;G03F7/40;H01L21/027 主分类号 G03F7/26
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