发明名称 |
RESIST TREATMENT DEVICE, RESIST TREATMENT METHOD, AND RESIST PATTERN |
摘要 |
PURPOSE:To prevent etching pattern defect and smear and enable a highly accurate etching pattern to be formed by providing at least a means for emitting ultraviolet rays onto a substrate where a resist is formed and a means for introducing an inactive gas into the device. CONSTITUTION:A substrate which is developed by exposure is dried by nitrogen gas etc. after rinsing with water and is carried into a UV chamber by a carrier arm. A gate valve 4 is closed before the substrate is placed on a hot plate 2 and an environmental gas is fully replaced by an inactive gas. At the same time when a substrate is grounded onto the hot plate 2, UV light starts to be irradiated. After emitting the UV light with a specified energy, irradiation is stopped. The temperature of the hot plate is increased, UV cure is performed at a boiling point or higher of a solvent medium which is included in a resist, a temperature below a thermal deformation temperature of the improved resists is maintained. The UV light irradiation energy can be reduced by increasing the substrate temperature at the time of irradiation. |
申请公布号 |
JPH0427113(A) |
申请公布日期 |
1992.01.30 |
申请号 |
JP19900161554 |
申请日期 |
1990.06.20 |
申请人 |
OMI TADAHIRO |
发明人 |
OMI TADAHIRO;NONAKA TORU;ONODERA MASANOBU;HORIKOSHI MOTONOBU |
分类号 |
G03F7/26;G03F7/38;G03F7/40;H01L21/027 |
主分类号 |
G03F7/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|