| 摘要 |
<p>Each of the n-type and p-type thermoelectric semiconductors (8, 9) are regularly arranged so that both end faces thereof form approximately flush interconnection end faces (3a, 3b), and are joined together through insulation, and interconnection electrodes (7) for alternately electrically connecting the n-type and p-type thermoelectric semiconductors (8, 9) are formed on both interconnection end faces (3a, 3b) to electrically connect the n-type and p-type thermoelectric semiconductors in series, thus obtaining a thermoelectric device block (3). A pair of connecting electrodes (6a, 6b) is formed to be electrically connected to the respective thermoelectric semiconductors corresponding to one end and the other end of a set of thermoelectric semiconductors connected in series in the thermoelectric device block (3). One of the interconnection end faces (3a) of the thermoelectric device block (3) is inserted into an opening (2a) of a flexible printed circuit (2) and then fixed onto an upper face of a thermal conduction plate (11) through an insulating layer so that a pair of the connecting electrodes (6a, 6b) is electrically connected to a pair of input/output electrodes (10a, 10b) formed on the flexible printed circuit (2), thus obtaining a thermoelectric device (20). <IMAGE></p> |
