| 摘要 |
A unit pixel in a CMOS image sensor with a high sensitivity is employed by modifying a unit pixel circuit and a layout. The unit pixel in the CMOS image sensor including: an active area defined by an FOX; a photodiode formed in a predetermined location of the active area; a transfer transistor including source/drain regions disposed between the photodiode and a floating diffusion node, wherein a transfer control signal is applied to a gate thereof; a reset transistor including source/drain regions disposed between the floating diffusion node and a power supply voltage (VDD) terminal, wherein a reset control signal is applied to a gate and a VDD is applied to a drain; a drive transistor of which a gate is connected to the VDD terminal and a drain is connected to the floating diffusion node; and a selection transistor of which a drain is connected to a source of the drive transistor and a source is connected to an output terminal, wherein a select control signal is applied to a gate thereof.
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