| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a decrease in breakdown voltage.SOLUTION: A semiconductor device comprises a first semiconductor region 2 of a first conductivity type, a second semiconductor region 3 of a second conductivity type, a first insulating layer 11, and a first insulating region 12. The second semiconductor region 3 is provided on the first semiconductor region 2. The first insulating layer 11 is in contact with the second semiconductor region 3. The first insulating layer 11 also surrounds at least a part of the first semiconductor region 2 and at least a part of the second semiconductor region 3. The first insulating region 12 surrounds at least a part of the first insulating layer 11.SELECTED DRAWING: Figure 2 |
