SEMICONDUCTOR DEVICE

摘要

The present invention provides a semiconductor device wherein the generation of eddy currents in a metal flat plate is reduced and the Q value of the RF circuit of the semiconductor device is improved even using the metal flat plate as a support. The semiconductor device comprises: a metal flat plate (1); a first insulating material layer (4a) formed on one main surface of the metal flat plate (1); a semiconductor chip (2) mounted on the surface of the first insulating material layer (4a) via an adhesion layer (3) with an element circuit surface oriented upward; a second insulating material layer (4b) for sealing the semiconductor chip (2) and the periphery thereof; a wiring layer (5) provided in the second insulating material layer (4b) and partially extending to a peripheral region of the semiconductor chip (2); a conductive portion (6) provided in the second insulating material layer (4b) and connecting an electrode (22) on the element circuit surface of the semiconductor chip (2) and the wiring layer (5); and an external electrode (7) formed on the wiring layer (5).