发明名称 |
METHOD FOR FABRICATING VARIOUS HEIGHT METAL STRUCTURE |
摘要 |
<p>Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers (20'a,20'b,20c), to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively. <IMAGE></p> |
申请公布号 |
KR20050060889(A) |
申请公布日期 |
2005.06.22 |
申请号 |
KR20030092620 |
申请日期 |
2003.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, DONG SIK;JUN, CHAN BONG;CHOI, HYUNG;SONG, HOON |
分类号 |
H01L21/288;C25D7/12;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):C25D7/12 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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