发明名称 FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide technology advantageous for easily forming a plurality of fine fins on a substrate.SOLUTION: A formation method for forming a fin pattern 3 on a substrate is provided, where the fin pattern comprises a plurality of linear fins 14 extending in a first direction and arranged in a second direction different from the first direction. The substrate includes a first active region 10a and a second active region 10b having different types of conductivity from each other, adjoining to each other in the second direction. In the method, a resist pattern 24 is formed on the substrate in such a manner that, an interval between a fin which is one of the plurality of fins 14a formed in the first active region and is nearest to the boundary between the first active region and the second active region, and a fin which is one of the plurality of fins 14b formed in the second active region and is nearest to the boundary, is larger than a pitch of the plurality of fins formed in the first active region and in the second active region.SELECTED DRAWING: Figure 6
申请公布号 JP2016162942(A) 申请公布日期 2016.09.05
申请号 JP20150041773 申请日期 2015.03.03
申请人 CANON INC 发明人 TSUJITA KOICHIRO
分类号 H01L21/8234;H01L21/3065;H01L21/82;H01L21/8238;H01L27/088;H01L27/092 主分类号 H01L21/8234
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