THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF, AND DISPLAY DEVICE

摘要

A thin film transistor and a fabricating method thereof, and a display device are disclosed according to embodiments of the present invention, which effectively reduce occurrences of hillocks on a surface of an aluminum film, increase stability of active layer property, and decrease power consumption of the products. The film transistor comprises: a substrate (10), and a gate electrode (12), a gate insulating layer (13), an active layer (14), a source electrode (15) and a drain electrode (16) sequentially formed over the substrate (10). The gate electrode (13) is formed between the substrate (10) and the gate insulating layer (13). The film transistor further comprises a first transition layer (11) disposed on the substrate and located between the gate electrode (12) and the substrate (10). The material of the first transition layer (11) has a coefficient of thermal expansion between the coefficients of thermal expansion of the materials for the substrate and the gate electrode. The gate insulating layer is formed at a temperature lower than a first limit temperature, which is referred as a temperature corresponding to a limit value of a film layer of the gate electrode (12) being not deformed under a compression stress.

主权项

1: A thin film transistor (TFT) comprising a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode sequentially formed over the substrate,
wherein the gate electrode is formed between the substrate and the gate insulating layer, the TFT further comprising: a first transition layer disposed on the substrate, and located between the gate electrode and the substrate, a material of the first transition layer having a coefficient of thermal expansion between a coefficient of thermal expansion of a material of the substrate and a coefficient of thermal expansion of a material of the gate electrode; and the gate insulating layer being formed at a temperature lower than a first limit temperature referred as a temperature corresponding to a limit value of a film layer of the gate electrode being not deformed under a compression stress.