| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor that can establish a high gain and a high speed when the transistor is subject to microfabrication. SOLUTION: The semiconductor device has an external base area 7 with a larger band gap than a base area 5 on the side face of the base area. The base area 5 typically uses silicon-germanium. COPYRIGHT: (C)2008,JPO&INPIT
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