SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first insulating layer disposed above the semiconductor substrate, and having a first wire-forming region and a first non-wire-forming region distinct from the first wire-forming region; a first metal wiring pattern disposed in the first wire-forming region; a second insulating layer disposed above the first insulating layer, and having a second wire-forming region and a second non-wire-forming region distinct from the second wire-forming region; a second metal wiring pattern disposed in the second wire-forming region; said first non-wire-forming region comprising a wire-opposed region opposing the second wire-forming region, and a non-wire-opposed region opposing the second non-wire-forming region; and first dummy metal patterns disposed in the wire-opposed region and in the non-wire-opposed region, wherein the first dummy metal patterns are electrically connected with neither the first metal wiring pattern nor the second metal wiring pattern, wherein the first wire forming region extends to both first and second directions, and an angle between the first direction and second direction is a right angle.