发明名称 COFESIB/PT MULTILAYERS EXHIBITING PERPENDICULAR MAGNETIC ANISOTROPY
摘要 <p>A CoFeSiB/Pt(Cobalt-Ferrum-Silicone-Boron/Platinum) multi-layer thin film with perpendicular magnetic anisotropy is provided to secure low coercivity, remanent magnetization similar to saturation magnetization, and low saturation magnetization and to minimize the consumption of power. A CoFeSiB/Pt multi-layer thin film with perpendicular magnetic anisotropy is composed of: a first Pt/CoFeSiB layer; a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer; a third Pt/CoFeSiB layer formed on the second Pt/CoFeSiB layer; and a fourth Pt/CoFeSiB layer formed on the third Pt/CoFeSiB layer. The thickness ratio of the first and second Pt/CoFeSiB layers is 1:1. Coercivity of the multi-layer thin film with perpendicular magnetic anisotropy is below 200e. If the thickness of Pt is 8 angstroms, the thickness of CoFeSiB is 3 angstroms. Or, if the thickness of CoFeSiB is 3 angstroms, Pt is over 14 angstroms.</p>
申请公布号 KR20080048151(A) 申请公布日期 2008.06.02
申请号 KR20060118143 申请日期 2006.11.28
申请人 KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION 发明人 KIM, YOUNG KEUN;KIM, YOU SONG;CHUN, BYUNG SUN;HAN, SEUNG YOUB;RHEE, JANG ROH
分类号 B32B9/04 主分类号 B32B9/04
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