发明名称 |
COFESIB/PT MULTILAYERS EXHIBITING PERPENDICULAR MAGNETIC ANISOTROPY |
摘要 |
<p>A CoFeSiB/Pt(Cobalt-Ferrum-Silicone-Boron/Platinum) multi-layer thin film with perpendicular magnetic anisotropy is provided to secure low coercivity, remanent magnetization similar to saturation magnetization, and low saturation magnetization and to minimize the consumption of power. A CoFeSiB/Pt multi-layer thin film with perpendicular magnetic anisotropy is composed of: a first Pt/CoFeSiB layer; a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer; a third Pt/CoFeSiB layer formed on the second Pt/CoFeSiB layer; and a fourth Pt/CoFeSiB layer formed on the third Pt/CoFeSiB layer. The thickness ratio of the first and second Pt/CoFeSiB layers is 1:1. Coercivity of the multi-layer thin film with perpendicular magnetic anisotropy is below 200e. If the thickness of Pt is 8 angstroms, the thickness of CoFeSiB is 3 angstroms. Or, if the thickness of CoFeSiB is 3 angstroms, Pt is over 14 angstroms.</p> |
申请公布号 |
KR20080048151(A) |
申请公布日期 |
2008.06.02 |
申请号 |
KR20060118143 |
申请日期 |
2006.11.28 |
申请人 |
KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION |
发明人 |
KIM, YOUNG KEUN;KIM, YOU SONG;CHUN, BYUNG SUN;HAN, SEUNG YOUB;RHEE, JANG ROH |
分类号 |
B32B9/04 |
主分类号 |
B32B9/04 |
代理机构 |
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