FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

Provided is a film forming apparatus which can remove a natural oxide film on a silicon substrate (W) at an extremely low temperature compared with the conventional apparatuses. The natural oxide film is removed at a low temperature by converting the natural oxide film on the silicon substrate (W) into a volatile substance and evaporating the substance. The natural oxide film can be converted into the volatile material, i.e., ammonium fluorosilicate, by having the natural oxide film react with ammonium fluoride. A single crystal SiGe film can be grown on the silicon substrate (W) from which the natural oxide film is removed. The apparatus is provided with a substrate transfer chamber for transferring an etching chamber, a SiGe growing chamber and the silicon substrate under controlled atmosphere.