| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which has high breakdown voltage and large forward current without increasing the size of a device.SOLUTION: A semiconductor device comprises: an Nsemiconductor substrate 10; an Nsemiconductor layer 20 formed on one surface of the semiconductor substrate 10; an insulation film 30 having an opening 30a formed on the semiconductor layer 20; one electrode 41 formed on the semiconductor layer 20 exposed on the opening 30a and on a side wall of the opening 30a and on the insulation film 30 around the opening 30a; and the other electrode 50 formed on the other surface of the semiconductor substrate 10. The side wall of the opening 30a is formed by a lower inclined part 31 and an upper inclined part 32 which are sequentially formed from an interface with the semiconductor layer 20 toward a surface of the insulation film 30. When assuming that an angle of the lower inclined part 31 to a surface of the semiconductor layer 20 is a lower taper angle θand an angle of the upper inclined part 32 to the surface of the semiconductor layer 20 is an upper taper angle θ, θ<θis satisfied.SELECTED DRAWING: Figure 3 |
