Power converter with bus bars

摘要

A power converter is equipped with a semiconductor module stack, a positive bus bar stack, and a negative bus bar stack. The positive bus bar stack has a first positive bus bar and a second positive bus bar stacked. The negative bus bar stack also has a first negative bus bar and a second negative bus bar stacked in a stacking direction Z of the positive bus bar stack. The first semiconductor modules of the semiconductor module stack are connected to the first positive bus bar and the first negative bus bar, while the second semiconductor modules of the semiconductor module stack are connected to the second positive bus bar and the second negative bus bar. This results in a decreased variation in mutual inductance among the semiconductor modules, which leads to a decrease in overall inductance of the power converter.

主权项

1. A power converter comprising:
a semiconductor module stack made up a plurality of semiconductor modules constituting a portion of a power converting circuit; a positive bus bar stack made up of a plurality of positive bus bars which include plate-like positive bus bar bodies and a plurality of positive connecting terminals extending from the positive bus bar bodies to connect with positive terminals of said semiconductor modules, the positive bus bar bodies being laid on each other; and a negative bus bar stack made up of a plurality of negative bus bars which include plate-like negative bus bar bodies and a plurality of negative connecting terminals extending from the negative bus bar bodies to connect with negative terminals of said semiconductor modules, the negative bus bar bodies being laid on each other, wherein the plurality of semiconductor modules of the semiconductor module stack include first semiconductor modules and second semiconductor modules, respectively, which are stacked with extending directions of the positive terminals and the negative terminals being identical with each other, wherein the positive bus bars of the positive bus bar stack include a first positive bus bar and a second positive bus bar, major bodies of the first positive bus bar and the second positive bus bar have respective thicknesses, the first semiconductor modules and the second semiconductor models have respective thicknesses, the thicknesses of the major bodies of the first positive bus bar and the second positive bus bar being stacked in a direction perpendicular to a stacking direction in which the thicknesses of the first semiconductor modules and the second semiconductor modules are stacked; wherein the negative bus bars of the negative bus bar stack include a first negative bus bar and a second negative bus bar, major bodies of the first negative bus bar and the second negative bus bar have respective thicknesses, the thicknesses of the major bodies of the first negative bus bar and the second negative bus bar being stacked in the stacking direction of the first positive bus bar and the second positive bus bar, and wherein the first semiconductor modules are connected to the first positive bus bar and the first negative bus bar, the second semiconductor modules being connected to the second positive bus bar and the second negative bus bar.