发明名称 |
VERFAHREN ZUR ZUECHTUNG EINES MULTIKOMPONENT-KRISTALLS. |
摘要 |
A process for growing a multi-component type crystal from the melt of a starting material consisting of more than three elements of the multi-component crystal in a sealed reaction container. The sealed reaction container is divided into a reaction zone and a vapour pressure control zone which are communicated to each other through a through-opening or openings. The starting material for the multi-component crystal is charged in the reaction zone while a vapour pressure control material consisting of more than two components of the multi-component is charged in the vapour pressure control zone. And then, the temperature in the reaction control zone is adjusted and maintained at a predetermined value to grow the crystal from the melt under a controlled vapour pressure. This process is applicable to produce a wide variety of compound semiconductors of II-VI, III-V or the like, or oxide crystals. |
申请公布号 |
DE3781016(D1) |
申请公布日期 |
1992.09.17 |
申请号 |
DE19873781016 |
申请日期 |
1987.04.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP |
发明人 |
MIYAZAKI, KENJI C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU OSAKA, JP |
分类号 |
C30B11/00;C30B11/06;C30B11/12;C30B29/40;C30B29/48 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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