MEMORY DEVICE OF SEMICONDUCTOR INTEGRATED CIRCUIT, AND METHOD FOR REPAIRING DEFECTIVE MEMORY-CELL COLUMN INCLUDED THEREIN

摘要

PURPOSE: To repair a defective column separately by sector by providing plural sector base redundant blocks having a redundant line of a memory cell and a sector selection means for dividing into different segments. CONSTITUTION: An array 10 of a flash EEPROM cell is composed of four sector base redundant blocks 2, 4, 6, 8 and eight sectors 12-26. Respective redundant blocks are incorporated in corresponded sectors, e.g. the block 2 existing in the sectors 12, 14. The sector selection circuit in the block 2 is used for separating the redundant columns existing in the sectors 12, 14 and can independently use them. By using the sector selection circuit for separating the redundant column to different segments, individual segments existing in the specified sector is made independent of another segment in the same column, and thus, it is used for exchanging or repairing the different defective column.