| 摘要 |
The present invention discloses a formation method of contact, which comprises: first providing a semiconductor substrate having a surface formed thereon sequentially adjacent first gate conductive structure, second gate conductive structure, third gate conductive structure, and fourth gate conductive structure, wherein the second and third gate conductive structures are located in an active area; next, conformally forming a metal wire layer on the substrate surface between the second and third gate conductive structures; then, forming an inter-layer dielectric material layer with a planar surface on the whole surface of the substrate to cover the metal wire layer and fill up the gap between of the first and second gate conductive structures and the gap between the third and fourth gate conductive structures; and finally, forming a first contact, a second contact, and a third contact in the inter-layer dielectric layer, wherein the first contact exposes the top of the first gate conductive structure, the second contact exposes the surface of the metal wire layer, and the third contact exposes the substrate surface of the outside of the fourth gate conductive structure. |
