发明名称 Spacer-based antifuse structure for low capacitance and high reliability and method of fabrication thereof
摘要 The present antifuse includes a base having a first electrode thereon which defines a top surface and a side surface. Antifuse material is disposed on the first electrode on at least a portion of the top surface and at least a portion of the side surface, with a second electrode on the antifuse material. Due to this configuration, defect problems in etching oxide as part of the antifuse structure are avoided, and meanwhile capacitance of the device is very low.
申请公布号 US6025637(A) 申请公布日期 2000.02.15
申请号 US19980023669 申请日期 1998.02.10
申请人 ADVANCED MICRO DEVICES, INC. 发明人 MEHTA, SUNIL D.
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L29/00 主分类号 H01L21/82
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