发明名称 Apparatuses and methods for maskless mesoscale material deposition
摘要 Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance-the orifice to substrate distance may be several millimeters-and direct write onto non-planar surfaces is possible.
申请公布号 US7485345(B2) 申请公布日期 2009.02.03
申请号 US20050317457 申请日期 2005.12.22
申请人 OPTOMEC DESIGN COMPANY 发明人 RENN MICHAEL J.;KING BRUCE H.;ESSIEN MARCELINO;MARQUEZ GREGORY J.;GIRIDHARAN MANAMPATHY G.;SHEU JYH-CHERNG
分类号 B05D5/00;G02B6/00 主分类号 B05D5/00
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